symbol v ds v gs i dm t j , t stg symbol ty p max 64 83 89 120 r jl 53 70 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 12 gate-source voltage drain-source voltage 20 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 6.3 30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.5 1.08 -55 to 150 t a =70c i d 8 ao8804 common-drain dual n-channel enhancement mode field effect transistor features v ds (v) = 20v i d = 8a (v gs = 10v) r ds(on) < 13m ? (v gs = 10v) r ds(on) < 14m ? (v gs = 4.5v) r ds(on) < 15.5m ? (v gs = 3.8v) r ds(on) < 19m ? (v gs = 2.5v) r ds(on) < 27m ? (v gs = 1.8v) esd rating: 2000v hbm general description the ao8804 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected. this device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common- drain configuration. standard product ao8804 is pb- free (meets rohs & sony 259 specifications). g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 tssop-8 top view g1 d1 s1 g2 d2 s2 alpha & omega semiconductor, ltd.
ao8804 symbol min typ max units bv dss 20 v 10 t j =55c 25 i gss 10 a bv gso 12 v v gs(th) 0.5 0.75 1 v i d(on) 30 a 10 13 11.5 14 t j =125c 13.3 16 13 15.5 15.4 19 22.2 27 g fs 36 s v sd 0.73 1 v i s 2.4 a c iss 1810 pf c oss 232 pf c rss 200 pf r g 1.6 ? q g 17.9 nc q gs 1.5 nc q gd 4.7 nc t d(on) 2.5 ns t r 7.2 ns t d(off) 49 ns t f 10.8 ns t rr 20.2 ns q rr 8nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. r ds(on) static drain-source on-resistance v gs =10v, i d =8a v gs =3.8v, i d =5a body diode reverse recovery time body diode reverse recovery charge i f =8a, di/dt=100a/ s reverse transfer capacitance turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =1.2 ? , r gen =3 ? turn-on delaytime i f =8a, di/dt=100a/ s switching parameters a v gs =4.5v, v ds =5v v gs =4.5v, i d =5a gate-body leakage current gate-source breakdown voltage v ds =0v, i g =250ua gate threshold voltage m ? v ds =v gs i d =250 a v ds =16v, v gs =0v v ds =0v, v gs =10v v ds =5v, i d =8a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 a, v gs =0v i dss zero gate voltage drain current i s =1a,v gs =0v dynamic parameters v gs =0v, v ds =10v, f=1mhz v gs =2.5v, i d =4a maximum body-diode continuous current input capacitance output capacitance v gs =1.8v, i d =3a forward transconductance diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =4.5v, v ds =10v, i d =8a gate source charge gate drain charge a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4: feb 2009 alpha & omega semiconductor, ltd.
ao8804 typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2 v 2.5v 4.5v 10 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 5 10 15 20 25 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v v gs =2.5v 0 5 10 15 20 25 30 35 40 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =3.8v i d =5a v gs =1.8v v gs =1.8v 25c 125c i d =5a alpha & omega semiconductor, ltd.
ao8804 typical electrical and thermal characteristics 0 1 2 3 4 5 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1m s 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =10v i d =8a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =89c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd.
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